STL28NF3LL |
RFQ for STL28NF3LL Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| STL28NF3LL | - | QFN | 06+ |
This Power MOSFET is the second generation of STMicroelectronics unique "STripFET™" technology.The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT ™ package allows a significant reduction in board space without compromising performance.
Typical Application |
Features |
| DC-DC CONVERTERS | TYPICAL RDS(on) = 0.0055 IMPROVED DIE-TO-FOOTPRINT RATIOVERY LOW PROFILE PACKAGE |
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 30 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 30 | V |
| VGS | Gate- source Voltage | ± 16 | V |
| ID(#) | Drain Current (continuos) at TC = 25(Steady State) Drain Current (continuos) at TC = 100 |
28 17.5 |
A A |
| IDM() | Drain Current (pulsed) | 112 | A |
| PTOT | Total Dissipation at TC = 25 | 80 | W |
| Derating Factor(2) | 0.64 | W/ | |
| EAS (1) | Single Pulse Avalanche Energy | 2 | J |
| Tstg | Storage Temperature | 55 to 150 | |
| Tj | Max. Operating Junction Temperature |
